![]() ![]() -1 germanium-silicon Chemical compound 0.000 title claims abstract description 20.Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.) Filing date Publication date Application filed by Shanghai Huahong NEC Electronics Co Ltd filed Critical Shanghai Huahong NEC Electronics Co Ltd Priority to CN201110326307.7A priority Critical patent/CN103066114B/en Publication of CN103066114A publication Critical patent/CN103066114A/en Application granted granted Critical Publication of CN103066114B publication Critical patent/CN103066114B/en Status Active legal-status Critical Current Anticipated expiration legal-status Critical Links Original Assignee Shanghai Huahong NEC Electronics Co Ltd Priority date (The priority date is an assumption and is not a legal conclusion. Shanghai Huahong Grace Semiconductor Manufacturing Corp Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.) ( en Inventor 陈帆 陈雄斌 薛凯 周克然 潘嘉 李�昊 王永成 Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.) Granted Application number CN2011103263077A Other languages Chinese ( zh) ![]() Google Patents CN103066114A - Positive-negative-positive transistor integrated with germanium-silicon hetero-junction negative-positive-negative transistor CN103066114A - Positive-negative-positive transistor integrated with germanium-silicon hetero-junction negative-positive-negative transistor ![]()
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